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Electrical Characteristics
V BIAS (V DD , V BS ) = 15.0V, R DT = GND, T A = 25 ° C, unless otherwise specified. The V IN and I IN parameters are
referenced to GND. The V O and I O parameters are referenced to V S and GND and are applicable to the respective
outputs HO and LO.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
SUPPLY CURRENT SECTION
I QBS
I QDD
Quiescent V BS supply current
Quiescent V DD supply current
V IN =0V or 5V
V IN =0V or 5V, R DT =0 Ω
35
650
90
900
I SD(5)
I PBS
I PDD
I LK
V DD supply current at shutdown mode
Operating V BS supply current
Operating V DD supply current
Offset supply leakage current
SD=GND
f IN =20kHz,rms value
f IN =20kHz,rms value, R DT =0 Ω
V B =V S =600V
650
400
950
900
700
1200
10
μ A
POWER SUPPLY SECTION
V DDUV+
V BSUV+
V DD and V BS supply under-voltage
positive going threshold
10.7
11.6
12.5
V DDUV-
V BSUV-
V DD and V BS supply under-voltage
negative going threshold
10.0
10.8
11.6
V
V DDUVH
V BSUVH
V DD and V BS supply under-voltage
lockout hysteresis
0.8
GATE DRIVER OUTPUT SECTION
V OH
V OL
High-level output voltage, V BIAS -V O
Low-level output voltage, V O
I O =20mA
1.0
0.6
V
V
I O+
I O-
V S
Output high short-circuit pulse current
Output low short-circuit pulsed current
Allowable negative V S pin voltage for IN
signal propagation to HO
V O =0V, V IN =5V with PW<10μs
V O =15V, V IN =0V with PW<10μs
250
500
350
650
-9.8
-7.0
mA
mA
V
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)
V IH
V IL
Logic "1" input voltage
Logic "0" input voltage
2.9
1.2
V
V
I IN+
I IN-
Logic "1" input bias current
Logic "0" input bias current
V IN =5V
V IN =0V
50
100
2.0
μ A
μ A
SD+
SD-
R PD
Shutdown "1" input voltage
Shutdown "0" input voltage
Input pull-down resistance
2.9
100
1.2
V
V
K Ω
Note:
5.This parameter guaranteed by design.
? 2006 Fairchild Semiconductor Corporation
FAN7383 Rev. 1.0.3
6
www.fairchildsemi.com
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